| PART |
Description |
Maker |
| MJ10016 MJ12002 |
From old datasheet system
RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE
|
Advanced Semiconductor, Inc.
Advanced Semiconductor Inc
|
| 2SC3991L |
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 50A I(C) | TO-247VAR 晶体管|晶体管|叩| 500V五（巴西）总裁| 50A条一（c）|47VAR
|
Honeywell International, Inc.
|
| APT50M85JVFR |
POWER MOS V 500V 50A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| 0251.250PRT1HF 0251.125PRT1HF 0251.062PRT1HF 0251. |
VERY FAST BLOW ELECTRIC FUSE, 0.25A, 125VAC, 125VDC, 50A (IR), THROUGH HOLE HALOGEN FREE AND ROHS COMPLIANT
VERY FAST BLOW ELECTRIC FUSE, 0.125A, 125VAC, 125VDC, 50A (IR), THROUGH HOLE HALOGEN FREE AND ROHS COMPLIANT
VERY FAST BLOW ELECTRIC FUSE, 0.062A, 125VAC, 125VDC, 50A (IR), THROUGH HOLE HALOGEN FREE AND ROHS COMPLIANT
VERY FAST BLOW ELECTRIC FUSE, 0.375A, 125VAC, 125VDC, 50A (IR), THROUGH HOLE HALOGEN FREE AND ROHS COMPLIANT
VERY FAST BLOW ELECTRIC FUSE, 12A, 32VAC, 32VDC, 50A (IR), THROUGH HOLE
VERY FAST BLOW ELECTRIC FUSE, 7A, 125VAC, 125VDC, 50A (IR), THROUGH HOLE
VERY FAST BLOW ELECTRIC FUSE, 1A, 125VAC, 125VDC, 50A (IR), THROUGH HOLE
VERY FAST BLOW ELECTRIC FUSE, 15A, 32VAC, 32VDC, 50A (IR), THROUGH HOLE
VERY FAST BLOW ELECTRIC FUSE, 1.5A, 125VAC, 125VDC, 50A (IR), THROUGH HOLE
VERY FAST BLOW ELECTRIC FUSE, 10A, 125VAC, 125VDC, 50A (IR), THROUGH HOLE
VERY FAST BLOW ELECTRIC FUSE, 3A, 125VAC, 125VDC, 50A (IR), THROUGH HOLE
|
3M Company
|
| FAP-450 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 500V五（巴西）直|4A条（丁）|47VAR
N-channel MOS-FET(500V, 0,38Ω, 14A, 190W)
N-channel MOS-FET(500V, 0,38楼?, 14A, 190W)
|
TOKO, Inc.
Fuji Electric
|
| IRC830 |
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
| MQ115-8S-3B MQ115-8S-3A MQ115-12P-1A MQ115-12P-1B |
TELEPHONE SWITCH SYSTEM IDC CONNECTOR MQ115 SERIES
BK 4
THYRISTOR 75V 50A SMB DO-214AA
THYRISTOR 65V 50A SMB DO-214AA
TELEPHONE SWITCH SYSTEM IDC CONNECTOR MQ115 SERIES
Large format insert strip sheet, perforated, ruled, for terminal strip marker KLM 1, lettering field: 24 x 4 mm, 350-section - ES/KLM 1-GB IDC的电话交换系统连接器MQ115系列
TELEPHONE SWITCH SYSTEM IDC CONNECTOR MQ115 SERIES IDC的电话交换系统连接器MQ115系列
THYRISTOR 160V 50A SMB DO-214AA IDC的电话交换系统连接器MQ115系列
THYRISTOR 58V 50A SMB DO-214AA IDC的电话交换系统连接器MQ115系列
THYRISTOR 140V 50A SMB DO-214AA IDC的电话交换系统连接器MQ115系列
End bracket, for railless direct mounting of short strips or for intermediate mounting at type change, hole: 4.2 mm, width: 8.5 mm - E/BK IDC的电话交换系统连接器MQ115系列
|
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
http://
HIROSE ELECTRIC Co., Ltd.
|
| FDD14AN06LA0 |
N-Channel PowerTrench MOSFET 60V, 50A, 14.6mohm
N-Channel Power Trench #174 MOSFET, 60V, 50A, 14mOhms
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2793 A5800303 |
Switching (500V/ 5A)
Switching (500V 5A)
From old datasheet system
Switching (500V, 5A)
|
ROHM[Rohm]
|
| FQH18N50V2 |
500V N-Channel Advanced QFET V2 series
500V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFB11N50 IRFB11N50APBF |
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
|
