| PART |
Description |
Maker |
| SICDS100V6-13 |
Hall effect measuring principle
|
SEC Electronics Inc.
|
| 08094600 |
The single pole remote control current isolating switches described in this datasheet section are different in size, shape and working principle
|
Littelfuse
|
| IPB60R120C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|
| IPB60R060C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|
| 10DL2C48A U10DL2C48A U10FL2C48A |
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| U2FWJ44M |
SWITCHING MODE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION
|
Toshiba Semiconductor
|
| BC848UF |
NPN Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
| BC856UF |
PNP Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
| BC808F |
PNP Silicon Transistor (High current application Switching application)
|
AUK[AUK corp]
|
| BC846F |
NPN Silicon Transistor (General purpose application Switching application)
|
AUK[AUK corp]
|
| BC848 |
NPN Silicon Transistor (General purpose application Switching application)
|
AUK corp
|
