PART |
Description |
Maker |
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
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Intel, Corp. Intel Corp. http:// Intel Corporation
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CAT28F102 CAT28F102T14I-45T CAT28F102PI-45T CAT28F |
90ns 1M-bit CMOS flash memory 70ns 1M-bit CMOS flash memory 55ns 1M-bit CMOS flash memory 45ns 1M-bit CMOS flash memory 1 Megabit CMOS Flash Memory
|
Catalyst Semiconductor http://
|
CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA |
512K-Bit CMOS Flash Memory 512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON Semiconductor
|
AM29LV160MB70RPCI AM29LV160MT85WAI AM29LV160MB90EI |
Flash Memory IC 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
|
Spansion, Inc. Advanced Micro Devices
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S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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Spansion Inc. Advanced Micro Devices, Inc. Spansion, Inc. http://
|
AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 6800uF 100WV 20% *NO Pb* 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48 VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC http://
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MB84VA2003-10 MB84VA20 MB84VA2002 MB84VA2002-10 MB |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
|
LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 |
4MEG (524288words x 8bit) flash memory 4 MEG (524288 words x 8 bits) Flash Memory
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
EN29LV641H EN29LV641L EN29LV641L-70TCP EN29LV641L- |
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
|
Eon Silicon Solution Inc.
|
UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting POT THUMBWHEEL 10K OHM LINEAR
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Panasonic Semiconductor Panasonic Corporation
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MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 x8 Flash EEPROM x8闪存EEPROM
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Macronix International Co., Ltd.
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