| PART |
Description |
Maker |
| MT2170 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
Microtune,Inc
|
| MT1230 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
Microtune,Inc
|
| MT1467 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
Microtune,Inc
|
| MT1120 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
Microtune,Inc
|
| MT1110 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
http://
|
| TC534 |
(TC530 / TC534) 5V PRECISION DATA ACQUISITION SUBSYSTEMS
|
TelCom Semiconductor
|
| TC534 |
(TC530 / TC534) 5V Precision Data Acquisition Subsystems
|
Microchip Technology
|
| RIT-1260 RIT-1262 |
High Performance STD Bus Compatible Analog I/O Subsystems
|
Intronics Power, Inc.
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MX |
3-in-1 silicon delay line. Output delay 45ns.
3-in-1 silicon delay line. Output delay 30ns.
3-in-1 silicon delay line. Output delay 90ns.
3-in-1 silicon delay line. Output delay 12ns.
3-in-1 silicon delay line. Output delay 25ns.
Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No
3-in-1 silicon delay line. Output delay 70ns.
3-in-1 silicon delay line. Output delay 75ns.
3-in-1 silicon delay line. Output delay 50ns.
3-in-1 silicon delay line. Output delay 20ns.
3-in-1 silicon delay line. Output delay 80ns.
3-in-1 silicon delay line. Output delay 15ns.
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| 1N5361BG 1N5361BRLG 1N5338BG 1N5338BRLG 1N5388BRLG |
5 Watt Silicon Zener Diode(120V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(200V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(150V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(140V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(110V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(100V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(68V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(60V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(62V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Silicon Zener Diode(56V齐纳电压,5W,硅齐纳稳压二极管)
5 Watt Surmetic TM 40 Zener Voltage Regulators
|
ONSEMI[ON Semiconductor]
|
| 1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V，稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电2V的，稳定电流一十一点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V，稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定（稳定电压均.9V，稳定电流六十四毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V，稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V，稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.1V，稳定电8毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压，稳定电流21毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V，稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电5V的，稳定电流三点三毫安的硅功率齐纳二极管
Silicon Power Z-Diodes 硅功率Z -二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电3V的，稳定电流十九毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V，稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电0V的，稳定电流十二点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电流三一毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电1毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.6V的稳定电9毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V，稳定电3mA的硅功率齐纳二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V，稳定电9mA的硅功率齐纳二极
From old datasheet system
Silicon Power Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
|
