| PART |
Description |
Maker |
| IGC142T120T6RM |
IGBT4 Medium Power Chip
|
Infineon Technologies AG
|
| IGC27T120T6L |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| IGC18T120T6L |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| IGC99T120T6RH |
IGBT4 High Power Chip
|
Infineon Technologies AG
|
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| VJ15MA0340KBA |
Medium Power Multilayer Chip Varistor
Medium Power Multilayer Chip Varistor
|
AVX Corporation
|
| AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体 GHz中等功率硅双极晶体管芯片（高 GHz的中等功率硅双极型晶体管
|
Agilent(Hewlett-Packard)
HIROSE ELECTRIC Co., Ltd.
|
| SBM52414X SBM52414Z SBM51414G SBM51414N SBM51414Z |
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 中功率比迪光学标准模310纳米发光550纳米接收
Transceiver
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
| 2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A580 |
Medium Power Transistor (32V, 2A)
2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Medium Power Transistor 32V/ 2A
Medium Power Transistor 32V, 2A
Medium Power Transistor 32V 2A
From old datasheet system
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| LC5852N |
Four-Bit Single-Chip Microcontroller with On-Chip LCD Drivers for Small-Scale Control in Medium-Speed Applications
|
SANYO
|
| APTGL40H120T1G |
Full bridge Trench Field Stop IGBT4 Power Module
|
Microsemi Corporation
|
