| PART |
Description |
Maker |
| MTP20N15E |
Power MOSFET 20 Amps, 150 Volts N-Channel TO-220
|
ONSEMI[ON Semiconductor]
|
| NTB35N15 NTB35N15T4 NTB35N15-D |
Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode D2PAK
|
ON Semiconductor
|
| NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
|
ONSEMI
ON Semiconductor
|
| RM912 |
CDMA/AMPS 3-4 Volt Power Amplifier (824-849 MHz)
CDMA/AMPS 3-4 Volt Power Amplifier (824849 MHz)
|
Conexant Systems, Inc.
|
| RF1K49224 FN4330 |
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFETPower MOSFET
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET
From old datasheet system
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET
3.5A/2.5A/ 30V/ 0.060/0.150 Ohms/ Complementary LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| RF1K49223 FN4322 |
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET?Power MOSFET
From old datasheet system
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| AM29F800BT-90WBC AM29F800BT-55WBI AM29F800BB-55WBE |
and flexible way to implement power solutions for the latest high performance CPUs and ASICs.; Same as IR3087 with bag packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3709Z with Lead Free Packaging
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7470 with Lead Free Packaging
Complete VR11.0 or AMD PVID power solution.; A IR3505M packaged on tape and reel 3000 per reel
8 PWM 400 KHz Sync Contr in a 8-Pin SOIC(NB) package; A IRU3037ACS with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRLZ44NS with Lead Free Packaging
The XPHASE Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way to implement a complete an Opteron or Athlon 64 power solution.; A IR3082M with Tape and Reel Packaging
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; Similar to IRLL024Z with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package; A IRLL2705 with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-262 Package; Similar to IRF2807ZL with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3805S with Lead Free Packaging
x8/x16 Flash EEPROM x8/x16闪存EEPROM
XPHASE VRD10 Control IC with VccVid and Overtemp Detect; Similar to IR3080M with Lead Free Packaging on Tape and Reel x8/x16闪存EEPROM
XPHASE IC with Fault and Overtemp Detect; Same as the IR3088AM with Tape and Reel Packaging. x8/x16闪存EEPROM
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
|
Linear Technology, Corp.
ATM Electronic, Corp.
Integrated Device Technology, Inc.
Advanced Micro Devices, Inc.
|
| MTD3055VL1 MTD3055VLT4 MTD3055VL MTD3055VL-D |
Power MOSFET 12 Amps, 60 Volts 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| NTMD6P02R2 NTMD6P02R2-D NTMD6P02 |
Power MOSFET 6 Amps, 20 Volts P?Channel SO, Dual(6A0V，双P沟道SO-8封装的功率MOSFET)
Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
| MTD4N20E MTD4N20ET4 MTD4N20E-1 |
N?Channel DPAK Power MOSFET
OBSOLETE - Power MOSFET 4 Amps, 200 Volts
|
ON Semiconductor
|
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