| PART |
Description |
Maker |
| SST29EE010-150-3I-E SST29EE010-200-3I-E SST29EE010 |
1 Megabit (128K x 8) Page Mode EEPROM
|
Silicon Storage Technology, Inc.
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| S29GL016A S29GL016A100BAI010 S29GL016A100BAI012 S2 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| V53C16125H V53C16125HK60 V53C16125HT50 |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
128K x 16bit high performance fasr page mode CMOS dynamic RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
| S29GL01GP S29GL-P12 S29GL01GP11TFIR20 S29GL256P90T |
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
MirrorBit? Flash Family
MirrorBit? Flash Family
|
SPANSION
|
| IS41C16128-35T IS41C16128-35TI IS41C16128-35K IS41 |
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 35 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 40 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 45 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 50 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 60 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
| S70GL01GN00 S70GL01GN0007 |
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit垄芒 Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
| AM27X010 AM27X010-120JC AM27X010-120JI AM27X010-12 |
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 250 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 55 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 120 ns, PDIP32
CABLE TIE BARB TY 120LB 18.1,1
|
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
ADVANCED MICRO DEVICES INC
|
| UPD424900LLE-A80 UPD424900LLE-A70 UPD424900LG5M-A8 |
FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
x9 Fast Page Mode DRAM X9热卖快速页面模式的DRAM
|
Powerex, Inc.
|
| UPD4265400G7-A50 UPD4265400G7-A60 UPD4265400G7-A70 |
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
128K x 8 Static RAM
x4FastPageModeDRAM
|
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