| PART |
Description |
Maker |
| FRM20 |
Frame and Bar cores and accessories
|
Ferroxcube International Holding B.V.
|
| PBG |
Dual Linear Bar Graph, Two Separate Bar Graphs, Continuous but Precisely Controlled Bar Length
|
Vishay
|
| B65549-E4-X23 B65541-D-R26 B65541-D-R33 B65541-D-R |
PM/P/P Cores Halves/EP/TT/PR Cores 下午/ P型半/环氧树脂/公关磁芯
|
EPCOS AG
|
| BA-8Y6UW BA-2D2UW BA-2E2UW BA-2G2UW BA-2H2UW BA-2R |
LED LIGHT BAR & BAR GRAPH ARRAYS
ENCLOSURE, CLEAR DOORENCLOSURE, CLEAR DOOR; Length / Height, external:185mm; Width, external:213mm; Depth, external:118mm; Material:Polycarbonate; Colour:Light Grey; Flammability rating:UL94-5V; IP rating:IP 65; RAL number:7035;
LED LIGHT BAR & BAR GRAPH ARRAYS 发光二极管光
|
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YSTONE[Yellow Stone Corp]
早安股份有限公司
Yellow Stone, Corp.
|
| ETD49 ETD34 EER25 EER30 EER50 EER35/34B EER28A EER |
EER CORES. ETD CORES
|
YUXIANG Magnetc materials Ind. Co., Ltd.
|
| B65622-A-M1 B65621 B65621J0000R026 B65621J0000R048 |
PM/P/P Cores Halves/EP/TT/PR Cores
|
EPCOS[EPCOS]
|
| B65840-F1106-T1 B65839-A100-A38 B65839-A100-A57 B6 |
PM/P/P Cores Halves/EP/TT/PR Cores
|
EPCOS AG
EPCOS[EPCOS]
|
| B65672-A5002 B65672-B-T1 B65672-B5000 B65672B50000 |
PM/P/P Cores Halves/EP/TT/PR Cores
|
http://
EPCOS[EPCOS]
|
| IDT70824L IDT70824L20G IDT70824L20GB IDT70824L20PF |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
IDT
Integrated Device Technology
|
| IDT70825L20G IDT70825L35G IDT70825L45G IDT70825S45 |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
Cabinet Rack Front Panel RoHS Compliant: Yes 8K X 16 STANDARD SRAM, 20 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 35 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 20 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
SRAM
Integrated Device Technology, Inc.
|
| 2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
