| PART |
Description |
Maker |
| ML74WLAC |
NAND Gate (unbuffered) and Inverter (unbuffered)
|
Minilogic Device Corporation Limited
|
| ML74WLDE |
AND Gate (unbuffered) and OR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
| ML74WLBF |
NOR Gate (unbuffered) and Buffer
|
Minilogic Device Corporation Limited
|
| 74HCU04DR2G 74HCU04DTR2G |
Hex Unbuffered Inverter; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 HC/UH SERIES, HEX 1-INPUT INVERT GATE, PDSO14
Hex Unbuffered Inverter; Package: TSSOP-14; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 HC/UH SERIES, HEX 1-INPUT INVERT GATE, PDSO14
|
ON Semiconductor
|
| NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM
200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HYMD216726A6J-J HYMD216726AL6J-J |
Unbuffered DDR SO-DIMM
16Mx72|2.5V|J|x5|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| WG14013FR04 WG12013FR02 WG18015R FR35 WG18027R12 W |
1340 A, 1300 V, GATE TURN-OFF SCR
2150 A, 1500 V, SYMMETRICAL GTO SCR
820 A, 4000 V, GATE TURN-OFF SCR
1685 A, 2700 V, GATE TURN-OFF SCR
870 A, 600 V, GATE TURN-OFF SCR
700 A, 600 V, GATE TURN-OFF SCR
730 A, 1000 V, GATE TURN-OFF SCR
890 A, 1000 V, GATE TURN-OFF SCR
|
WESTCODE SEMICONDUCTORS LTD
|
| HYMD132725B8J-J HYMD132725BL8J-J |
32Mx72|2.5V|J|x18|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
