PART |
Description |
Maker |
ML74WLCE |
Inverter (unbuffered) and OR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
74AHC1GU04 74AHC1GU04W5-7 74AHC1GU04SE 74AHC1GU04S |
UNBUFFERED SINGLE INVERTER GATE AHC/VHC/H/U/V SERIES, 1-INPUT INVERT GATE, PDSO5
|
Diodes Incorporated http://
|
ML74WLBE |
NOR Gate (unbuffered) and OR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
KK74HCU04A KK74HCU04AD KK74HCU04AN |
Hex Unbuffered Inverters High-Performance Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
MC74HCU04A |
Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS
|
ON Semiconductor
|
M470L2923BN0-CA2 M470L6524BTU0-CLCC M470L2923BN0-C |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC 64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
M378T6553CZ3-CCC M378T6553CZ3-CD5 M378T6553CZ3-CE6 |
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒 512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a> 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
WG14013FR04 WG12013FR02 WG18015R FR35 WG18027R12 W |
1340 A, 1300 V, GATE TURN-OFF SCR 2150 A, 1500 V, SYMMETRICAL GTO SCR 820 A, 4000 V, GATE TURN-OFF SCR 1685 A, 2700 V, GATE TURN-OFF SCR 870 A, 600 V, GATE TURN-OFF SCR 700 A, 600 V, GATE TURN-OFF SCR 730 A, 1000 V, GATE TURN-OFF SCR 890 A, 1000 V, GATE TURN-OFF SCR
|
WESTCODE SEMICONDUCTORS LTD
|
HYMD532646A6-H HYMD532646A6-K HYMD532646A6-L HYMD5 |
DDR SDRAM - Unbuffered DIMM 256MB Unbuffered DDR SDRAM DIMM 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
M464S6554BTS-CL7A M464S3354BTS M464S3354BTS-C7A M4 |
SDRAM Unbuffered SODIMM 内存缓冲SODIMM SDRAM Unbuffered SODIMM 内存缓冲的SODIMM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|