PART |
Description |
Maker |
126254H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
115180 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
115280 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
137141L |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH http://
|
137141 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH http://
|
Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器,红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm From old datasheet system
|
红外LED SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter From old datasheet system
|
Infineon
|
OD-148-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
BA-3S12UW |
red chips, which are made from GaAlAs on GaAs substrate.
|
http:// Bright LED Electronics Corp.
|
SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH OSRAM GmbH
|
TSAL7400 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package GaAs/GaAlAs IR Emitting Diode in 庐5 mm (T-13/4) Package GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package From old datasheet system GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken VISAY[Vishay Siliconix]
|
TSAL6100 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package From old datasheet system GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken VISAY[Vishay Siliconix]
|