| PART |
Description |
Maker |
| DXTP19020DP5 DXTP19020DP5-13 DXTP19020DP5-15 |
20V PNP HIGH GAIN TRANSISTOR PowerDI?5
20V PNP HIGH GAIN TRANSISTOR PowerDI垄莽5
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes Incorporated
|
| ZXTN25020DG ZXTN25020DGTA |
20V NPN high gain transistor in SOT223
|
Diodes Incorporated
Zetex Semiconductors
|
| ZXTP19020DZ-15 |
20V PNP HIGH GAIN TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| ZXTP25012EZ ZXTP25012EZTA |
20V PNP high gain transistor in SOT89
|
Diodes Incorporated
Zetex Semiconductors
|
| ZXTP19020DG-15 |
20V PNP HIGH GAIN TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFP420 Q62702-F1591 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC5177 2SC5177-T1 2SC5177-T2 |
High fT, high gain transistor
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
NEC
|
| BUL42D BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
