PART |
Description |
Maker |
DWBW2F4S02 DWBW2F4S12 DWBW2FTS32 DWBW3FTS32 DWBW3F |
Bandsplitters 200 GHz Channel Spacing
|
JDS Uniphase Corporation
|
DWBW2F4S01 DWBW2F4S11 DWBW3FWS41 DWBW2FTS31 DWBW3F |
Bandsplitters 100 GHz Channel Spacing
|
JDS Uniphase Corporatio... JDS Uniphase Corporation
|
AD7923BRU EVAL-AD7923CB2 AD7923 |
Four Wall Header; No. of Contacts:60; Pitch Spacing:0.1"; No. of Rows:2; Gender:Header; Body Material:Glass-filled Polyester; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:Through Hole RoHS Compliant: No 4-Channel 200 kSPS 12-Bit ADC with Sequencer in 16-Lead TSSOP 4-Channel, 200 kSPS, 12-Bit ADC with Sequencer in 16-Lead TSSOP 4-Channel 200 kSPS, 12-Bit A/D Converter with Sequencer in 16-Lead TSSOP
|
ADC AD[Analog Devices]
|
PE6833 |
200 Watts WR-90 RF Load Up To 12.4 GHz
|
Pasternack Enterprises,...
|
SFF250-61 SFF250/61 |
30 AMP 200 Volts 0.085OHM N-Channel POWER MOSFET 30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-61
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
NC503SM-12 |
Surface Mount Noise Sources 200 kHz to 2 GHz
|
Micronetics, Inc.
|
AGR21090E AGR21090EF AGR21090EU |
90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
AGR26045EF |
45 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
AGR26125E AGR26125EF AGR26125EU |
125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
FRK9260R FRK9260D FRK9260H |
26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs 26 A, 200 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE 26A/ -200V/ 0.200 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation] http://
|
PM200CL1A060 |
200 A, 600 V, N-CHANNEL IGBT Intellimod?/a> L-Series Three Phase IGBT Inverter 200 Amperes/600 Volts
|
POWEREX INC Powerex Power Semiconductor...
|