| PART |
Description |
Maker |
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| BUL53B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 12 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
TT electronics Semelab, Ltd.
|
| BUW49 BUW48 4206 |
HIGH CURRENT NPN SILICON TRANSISTORS
HIGH POWER NPN SILICON TRANSISTORS
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| BUX39 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| FZT1051A |
NPN Low Sat Transistor
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
SOT223 NPN SILICON PLANAR
|
Zetex Semiconductors
Diodes Incorporated
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| BUX45 |
HIGH VOLTAGE HIGH POWER SILICON NPN POWER SWITCHING TRANSISTORS
|
General Electric Solid State
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2SC4703 2SC4703-T1 2SC4703-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
| MJ11016G MJ11015G MJ11012G |
Bipolar Power TO3 NPN 30A 120V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Current Complementary Silicon Transistors
|
Rectron Semiconductor
|
| BUL54B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
