PART |
Description |
Maker |
STGE50NC60WD |
N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT
|
STMicroelectronics
|
STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?II MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
STGE200NB60S GE200NB60S |
N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT N-CHANNEL 150A - 600V - ISOTOP PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
STE38NB50 5564 |
N-Channel 500V-0.11Ω-38A- ISOTOP PowerMESHTM MOSFET(N沟道MOSFET) N沟道500V -0.11Ω- 38A条,1000V的集电极PowerMESHTM MOSFET的(不适用沟道MOSFET的) N - CHANNEL PowerMESH MOSFET N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH TM MOSFET From old datasheet system N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
RHRU5060 RHRU5050 FN3919 RHRU5040 |
50A, 400V - 600V Hyperfast Diodes 50A 400V - 600V Hyperfast Diodes From old datasheet system
|
HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
|
SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五(DRM)的| 50A条口(T)的有效值|08VARM8 TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
2MBI50F-060 |
IGBT(600V 50A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
NGTG50N60FW |
IGBT only 600V 50A PFC
|
ON Semiconductor
|
7MBR50SB060 |
IGBT(600V/50A/PIM)
|
FUJI[Fuji Electric]
|
1MBH50-060 1MBH50-06001 1MBH50D-060 |
600V / 50A Molded Package
|
Fuji Electric
|