| PART |
Description |
Maker |
| CEEH64TW CEEH64 |
Strobe Light Transformer Type: CEEH Series
|
Sumida Corporation
|
| TIG004SS |
Light-Controlling Strobe Applications 光控频闪灯应
From old datasheet system
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| CR3AMZ |
LOW POWER/ STROBE USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| GT8G103 |
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC342006 2SC3420 |
Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications
|
Toshiba Semiconductor
|
| EE-SPX301 EE-SPY301 EE-SPY302 EE-SPY401 EE-SPY402 |
Photomicrosensor with light modulation is not influenced by external light.
Slot-type Reflective Photomicrosensor
|
Omron Electronics LLC
|
| 2SC5030 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE STROBE FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| BH1680FVC |
Ambient Light Sensor ICs Analog Current Output Type Ambient Light Sensor IC
|
Rohm
|
| 2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
