| PART |
Description |
Maker |
| ML64114R ML6XX14 ML60114R |
785 nm, LASER DIODE
From old datasheet system
AIGaAs LASER DIODES AIGaAs激光二极管
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| ML6701A ML6411A ML6411C ML6101A |
AIGaAs Laser Diodes emitting light beams around 780nm wavelength
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML6101A ML6411A |
(ML6101A - ML6701A) AIGaAs Laser Diodes emitting light beams around 780nm wavelength
|
Mitsubishi Electric
|
| QEE122 QEE123 |
AIGAAS INFRARED EMITTING DIODE
|
QT Optoelectronics
|
| F5G1 |
AIGAAS INFRARED EMITTING DIODE
|
QT[QT Optoelectronics]
|
| F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
| MAN8240 MAN3210A MAN3240A MAN8210 MAN6260 MAN6280 |
DOUBLE HETEROJUNCTION AIGAAS RED SUNLIGHT VIEWABLE DISPLAYS 双异质结AIGAAS红日光可视显示展
DOUBLE HETEROJUNCTION AIGAAS RED SUNLIGHT VIEWABLE DISPLAYS
|
QT[QT Optoelectronics]
http://
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
