| PART |
Description |
Maker |
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| PB-CGB7016-SP-0000 PB-CGB7016-SC-0000 MIMIXBROADBA |
DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 直流8.0千兆赫的InGaP HBT，MMIC的或包装，匹配增益模块放大器
|
Mimix Broadband, Inc.
|
| MGR2018CT_D ON1880 MGR2018CT |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| TQ7125 |
824-849 MHz, Cellular AMPS/TDMA Power Amp IC-HBT
3V HBT TDMA Power Amplifier IC
|
TriQuint Semiconductor
|
| CGB240 |
2-Stage Bluetooth InGaP HBT Power Amplifier
2.4 to 2.5 GHz HBT Bluetooth Power Amplifier
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| MWS11-PH43-CS MWS11-PH41-CS |
CDMA 2000 InGaP HBT Power Amplifier
WCDMA InGaP HBT Power Amplifier
|
Microsemi
|
