PART |
Description |
Maker |
MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7785A C407785A |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
PH3135-25S |
Radar Pulsed Power Transistor,25W,2ms Pulse,10% Duty 3.1-3.5GHz 雷达脉冲功率晶体管,25瓦,2毫秒脉冲0%的.1 - 3.5GHz频段
|
Vishay Intertechnology, Inc. Tyco Electronics
|
EIA1314-8P |
13.75-14.5GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIB1414-4P |
14.0-14.5GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1414-2P |
14.0-14.5GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1314-4P EIB1314-4P |
13.75-14.5GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
ESLB-P245BA-X |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
Hitachi
|