PART |
Description |
Maker |
1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4 Diode Zener Single 25V 5% 10W 2-Pin DO-4 Diode Zener Single 9.1V 5% 10W 2-Pin DO-4 Diode Zener Single 30V 5% 10W 2-Pin DO-4 Diode Zener Single 16V 5% 10W 2-Pin DO-4 Diode Zener Single 7.5V 5% 10W 2-Pin DO-4 Diode Zener Single 24V 5% 10W 2-Pin DO-4 Diode Zener Single 175V 20% 10W 2-Pin DO-4 Diode Zener Single 50V 5% 10W 2-Pin DO-4 Diode Zener Single 43V 5% 10W 2-Pin DO-4 Diode Zener Single 56V 5% 10W 2-Pin DO-4 Diode Zener Single 13V 5% 10W 2-Pin DO-4 Diode Zener Single 8.2V 5% 10W 2-Pin DO-4 Diode Zener Single 15V 5% 10W 2-Pin DO-4 Diode Zener Single 27V 5% 10W 2-Pin DO-4 Diode Zener Single 18V 5% 10W 2-Pin DO-4 Diode Zener Single 105V 5% 10W 2-Pin DO-4 Diode Zener Single 52V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 5% 10W 2-Pin DO-4 Diode Zener Single 51V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
TDA7497 |
10W 10W 10W/15W TRIPLE AMPLIFIER 10 10W STEREO AMPLIFIER WITH MUTE/ST-BY
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V5964A C405964A |
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V7177 |
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SC1532 SC1532CS |
RES 6.19K OHM 1/10W .1% 0603 SMD 400mA SmartLDOTM with Internal Pass MOSFET
|
SEMTECH[Semtech Corporation]
|
MGFC40V4450A |
4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V5964A |
5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7785A |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V7785A C407785A |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|