| PART |
Description |
Maker |
| MGFK37V4045 K374045 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 5W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V4045_03 MGFK35V4045 MGFK35V404503 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK30V4045_05 MGFK30V4045 MGFK30V404505 |
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785A |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V7785A C397785A |
From old datasheet system
7.7 - 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LT5572EUF LT5572 |
1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator
|
Linear Technology
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| LT5515EUF |
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
|
Linear Technology
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK33V4045_97 MGFK33V4045 MGFK33V404597 |
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TQL5000 TQL500 |
LNA for 5GHz UNII Band 802.11a Systems
LNA for 5 GHz UNII Band 802.11a Systems
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
