| PART |
Description |
Maker |
| STI33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAK package
|
ST Microelectronics
|
| STI300N4F6 |
Automotive switching applications
N-channel 40 V, 1.7 mOhm, 160 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in a I2PAK package
|
STMicroelectronics
ST Microelectronics
|
| TIP812-DOC-20 TIP812-TM-21 TIP812 TIP812-10 TIP812 |
SERCOS Controller SERCOS总线控制
RES 680 OHM 1% 3W SILICONE WW SERCOS总线控制
N-Channel MOSFETs (>500V…900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 21.0 A; IDpuls (max): 63.0 A;
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| FQI50N06TU |
60V N-Channel QFET; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| SOT-363L |
Package Dimensions in mm
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| MLPM-6PIN |
Package Dimensions
|
IRF[International Rectifier]
|
| PM2UH1 |
Package Dimensions in mm
|
VISAY[Vishay Siliconix]
|
| 081029132636 |
PACKAGE OUTLINE DIMENSIONS
|
Galaxy Semi-Conductor H...
|
| 081029132723 |
PACKAGE OUTLINE DIMENSIONS
|
Galaxy Semi-Conductor H...
|
| DFN1006-2 |
PACKAGE OUTLINE DIMENSIONS
|
Galaxy Semi-Conductor H...
|
| STB4NB50 6246 |
N-CHANNEL 500V - 2.5 OHM - 3.8A - D2PAK/I2PAK POWERMESH MOSFET
N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET
N - CHANNEL 500V - 2.5 - 3.8A - D2PAK/I2PAK PowerMESH TM MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
