PART |
Description |
Maker |
HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM 256 MBit Synchronous DRAM 256兆位同步DRAM 256M (16Mx16) PC133 3-3-3 256Mb (32Mx8) FBGA PC133 3-3-3 256Mb (16Mx16) FBGA PC133 3-3-3 256Mb (64Mx4) PC133 3-3-3 256Mb (64Mx4) FBGA PC133 3-3-3 256 MBit Synchronous DRAM
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Infineon Technologies AG Infineon Technologies A...
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HYS64V64220GU-75-C2 HYS72V64220GU-75-C2 HYS72V6422 |
3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules SDRAM Modules - 512MB PC133 (2-2-2) 2-bank; End-of-Life SDRAM Modules - 512MB PC133 (2-2-2) 2-bank (ECC); End-of-Life SDRAM Modules - 512MB PC133 (3-3-3) 2-bank (ECC); End-of-Life SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.3400 x 64/72-Bit512MByte SDRAM内存模块168针脚无缓冲DIMM模块 64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
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INFINEON[Infineon Technologies AG] Infineon Technologies A...
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HYB39S256400DC-6 HYB39S256400DC-7 HYB39S256400DC-7 |
SDRAM Components - 256Mb (64Mx4) PC133 2-2-2 256 MBit Synchronous DRAM
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INFINEON[Infineon Technologies AG]
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HYS72V32600GR-7.5 HYS72V32501GR-7.5 HYS72V128520GR |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC 256MB (32Mx72) PC133 (3-3-3) 1-bank 1GB (128Mx72) PC133 (3-3-3) 1-bank GB的(128Mx72)的PC1333-3-3银行 ?512MB (64Mx72) PC133 (3-3-3) 1-bank?
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Infineon Technologies AG
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HYS72D16000GR HYS72D16000GR-7-A HYS72D16000GR-8-A |
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank Registered DDR SDRAM-Modules
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Infineon Technologies AG
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M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
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HYS72D32501GR-7-A |
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
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Infineon
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HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword × 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M × 8 components) PC133/100 SDRAM 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512 MB的无缓冲内存的SODIMM 64 Mword4位,133/100 MHz内存总线银模块(162米部分)PC133/100 SDRAM内存 x64 SDRAM Module
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Elpida Memory, Inc.
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KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2 SPECIALTY MEMORY CIRCUIT, PBGA107
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512M; 100MHz LVTTL interface SDRAM 512M; 133MHz LVTTL interface SDRAM
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Elpida Memory
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HY57V561620BT-H HY57V561620BL/ST-H HY57V561620BL/S |
SDRAM - 256Mb IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
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Hynix Semiconductor
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