| PART |
Description |
Maker |
| HL7852G |
GaAlAs Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| HL7851G |
GaAlAs Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| SLD105VL |
GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
| HL8325G |
GaAlAs Laser Diode
From old datasheet system
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HL7851G |
From old datasheet system
GaAlAs Laser Diode
|
HITACHI[Hitachi Semiconductor]
|
| SLD105VL |
GaAlAs Laser Diode For Portable CD(镓铝砷激光二极管(用于随身CD)) 发动器激光二极管便携CD（镓铝砷激光二极管（用于随身光盘）
|
Sony, Corp.
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
