| PART |
Description |
Maker |
| AR1101S10 AR1101 |
1000 V, 2250 A, 28 kA rectifier diode
|
POSEICO SPA
POSEICO[Power Semiconductors]
|
| TA0700C |
SAW Filter 2250 MHz
|
TAI-SAW TECHNOLOGY CO.,...
|
| TA0700B |
SAW Filter 2250 MHz
|
TAI-SAW TECHNOLOGY CO.,...
|
| KBP206 KBP208 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIE
|
Yea Shin Technology Co., Ltd
|
| KAI-1020-CBA-FD-BA |
IMAGE SENSOR-CCD, 1000(H) X 1000(V) PIXEL, 500mV, SQUARE, THROUGH HOLE MOUNT
|
KODAK IMAGE SENSOR SOLUTIONS
|
| U2797B-AFSG3 U2797B U2797B-AFS |
1000-MHz Quadrature Modulator 1000 - MHz的正交调制器
|
Atmel, Corp.
TEMIC[TEMIC Semiconductors]
|
| PME261JA4100KR19T0 |
PME261/P561, Film, Metallized Paper, General Purpose, 1000 pF, 10%, 1000 VDC, 85C, Lead Spacing = 10.2mm
|
Kemet Corporation
|
| C0603V102KDRACTU |
Capacitor, Ceramic, SMD, MLCC, Arcshield, High Voltage, Temp Stable, 1000 pF, /-10% Tol, 1000 V, X7R, 0603 (1608 metric)
|
Kemet Corporation
|
| 05110G0F 05110GOF |
Silicon Controlled Rectifier; Package: TO-65; IT (Av) (A): 50; VTM (V): 2.5; IH (mA): 200; VGT (V): 3; IGT (µA): 100000; Vrrm (V): 1000; 80 A, 1000 V, SCR, TO-208AC
|
Microsemi Corporation
Microsemi, Corp.
|
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| CMR1U-0110 CMR1U-10 CMR1U-02 CMR1U-06 CMR1U-04 |
SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 1 AMP, 100 THRU 1000 VOLTS
1 A, 1000 V, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
| CKR05BX102KRV |
Ceramic, Military/High Reliability, MIL-39014, 1000 pF, 10%, 200 V, BX, R (0.01%/1000 Hrs), Lead Spacing = 5.08mm
|
Kemet Corporation
|
|
