| PART |
Description |
Maker |
| VDS6632A4A-6 VDS6632A4A VDS6632A4A-5 VDS6632A4A-55 |
Synchronous DRAM(512K X 32 Bit X 4 Banks)
Synchronous DRAM(512K X 32 Bit X 4 Banks) 同步DRAM12k × 32的位× 4个银行）
|
A-DATA[A-Data Technology]
ADATA Technology Co., Ltd.
|
| A43L0616A A43L0616AV A43L0616AV-5 A43L0616AV-55 A4 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
| IC42S16101-6T |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
|
Integrated Circuit Solu...
|
| M12S64322A09 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| HY57V161610ET-10 HY57V161610ET-15 HY57V161610ET-55 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor Inc.
|
| M12L64322A-5BG M12L64322A-5TG M12L64322A-6BG M12L6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M32L32321SA M32L32321SA-5.5F M32L32321SA-5.5Q M32L |
512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
ETC
|
| IC42S16102 IC42S16102-5BG IC42S16102-5BIG IC42S161 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| N16D1633LPAZ2-75I N16D1633LPA N16D1633LPAC2-10I N1 |
512K 】 16 Bits 】 2 Banks Low Power Synchronous DRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
