PART |
Description |
Maker |
APT11GP60BDQB |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT45GP120B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT26GU30B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP60B APT40GP60S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT83GU30B APT83GU30S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technology
|
APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
|
Microsemi Corporation
|
APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
SPP04N60S5 |
Cool MOS Power Transistor(MOS 型功率晶体管) 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo... Advanced Power Technology Ltd.
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http:// Advanced Power Technology
|