| PART |
Description |
Maker |
| NE434S01 NE434S01-T1B NE434S01-T1 |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511 |
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| NE3515S02-T1C-A |
X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs
|
| NE334S01 NE334S01-T1 NE334S01-T1B |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C波段超低噪声放大器N沟道黄建忠场效应
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE32500N NE32500 NE32500M |
C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
|
CEL[California Eastern Labs]
|
| NE3517S03-T1C NE3517S03-T1D |
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
|
Renesas Electronics Corporation
|
| CE3520K3-C1 |
20 GHz Super Low Noise FET in Hollow Plastic PKG
|
California Eastern Labs
|
| ATF-13XXX ATF-10XXX |
Low Noise Gallium Arsenide FET(低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| NE321000 NE321000- |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP 晶体管|场效应| N沟道| 4V五（巴西）直| 15mA的我（直）|芯片
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC, Corp.
NEC[NEC]
|
| TL071M TL071I TL071C TL071B TL071_01 TL071A TL071A |
LOW NOISE SINGLE JFET OP-AMPS
LOW NOISE J-FET SINGLE OPERATIONAL AMPLIFIERS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
http://
NEC[NEC]
NEC Corp.
|
