| PART |
Description |
Maker |
| HUFA75631P3 HUFA75631S3ST |
33A, 100V, 0.040 Ohm, N-Channel, UltraFETPower MOSFETs
33A/ 100V/ 0.040 Ohm/ N-Channel/ UltraFET Power MOSFETs
33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| IRF9510 FN2214 |
From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| FRL130R FN3218 FRL130D FRL130H |
8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HUF75652G3 |
75A, 100V, 0.008 Ohm, N-Channel UltraFETPower MOSFET
TRANSISTOR,MOSFET,N-CHANNEL,100V
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
75A/ 100V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| WSK25120.00374OHM1EA WSK25120.00374OHM1BA WSK25120 |
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 75 ppm, 0.00374 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00127 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.0011 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00113 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00118 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00102 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00107 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00133 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00154 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.0014 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00143 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.0015 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00124 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00162 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00115 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00121 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00137 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00158 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.0013 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00105 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, CURRENT SENSE, METAL STRIP, 1 W, 1 %, 250 ppm, 0.00147 ohm, SURFACE MOUNT, 2512 CHIP
|
Vishay Intertechnology, Inc.
|
| STS2NF100 9055 |
N-CHANNEL 100V - 0.23 ohm - 6A SO-8 STripFET?/a> II POWER MOSFET
N-CHANNEL 100V - 0.23 ohm - 6A SO-8 STripFET⑩ II POWER MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
STMicroelectronics
ST Microelectronics
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| HUFA75623S3ST HUFA75623P3 HUFA75623S3S |
22A, 100V, 0.064 Ohm, N-Channel, UltraFETPower MOSFETs
22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
|
