| PART |
Description |
Maker |
| D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管（功100W - 28V 900MHz时）（镀金多用的DMOS射频硅场效应管（功率100W - 28V 900MHz的）
TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| AHV2000 AHV2004 AHV2011 AHV2002 AHV2003 AHV20 |
SILICON HYPERABRUPT TUNING VARACTOR UHF BAND, 6.05 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| AHV1001A |
SILICON HYPERABRUPT TUNING VARACTOR L BAND, 4.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KV2161-00 KV2121 KV2121-00 KV2151-00 KV2131-00 KV2 |
C BAND, 4.9 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Microwave Hyperabrupt Junction
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| KV3901 |
SILICON HYPERABRUPT TUNING DIODE 29 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-34
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| D1006UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应120W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1022UK D1022 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| D1002UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应40W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1017UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应150W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
ADVANCED SEMICONDUCTOR INC
|
