PART |
Description |
Maker |
IRG4PC40U IRG4PC40U-EPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package 40 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
|
Vishay Intertechnology, Inc. International Rectifier
|
W26NM60 |
N-CHANNEL 600V - 0.125ohm - 26A TO-247 Zener-Protected MDmesh TM Power MOSFET
|
意法半导
|
IRG4PC30KD IRG4PC30KD-EPBF |
600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 28 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier] Vishay Intertechnology, Inc.
|
FQPF8N60CF |
N-Channel QFETFRFETMOSFET 600V, 6.26A, 1.5
|
Fairchild Semiconductor
|
APT7575BN |
TRANSISTOR | MOSFET | N-CHANNEL | 750V V(BR)DSS | 13A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 750V直流五(巴西)直|13A条(丁)|采用TO - 247AD
|
TOKO, Inc.
|
IRCZ24 |
Power MOSFET(Vdss=55V/ Rds(on)=0.040ohm/ Id=26A) Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A) 60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
FDD390N15ALZ |
N-Channel PowerTrench? MOSFET 150V, 26A, 42mΩ
|
Fairchild Semiconductor
|
2SK3820 |
N-Channel Power MOSFET 100V 26A 60m Ohm TO-263-2L
|
ON Semiconductor
|
BUZ11A |
N-CHANNEL 50V - 0.045 OHM - 26A TO-220 STRIPFET POWER MOSFET
|
ST Microelectronics
|
BR108 BR10 BR1005 BR101 BR1010 BR102 BR104 BR106 |
10A SINGLE - PHASE SILICON BRIDGE 10A条单-相硅 MOSFET N-CH 500V 26A ISOPLUS220
|
Semtech, Corp. SEMTECH[Semtech Corporation]
|