PART |
Description |
Maker |
APT50GP60S |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT25GP90BDF1 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT13GP120K |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT83GU30B APT83GU30S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technology
|
APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
|
Microsemi Corporation
|
2SK2981 2SK2981-Z 2SK2981-E1 2SK2981-T1 2SK2981-T2 |
Power MOSFET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC] NEC Corp.
|
2SK2983 D12357EJ1V0DS00 2SK2983-ZJ 2SK2983-S 2SK29 |
Low voltage 4V drive power MOSFET MOS Field Effect Transistor From old datasheet system SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
APT65GP60L2DQ2 APT65GP60L2DQ2G |
POWER MOS 7 IGBT
|
http:// Advanced Power Technology
|