PART |
Description |
Maker |
RN4603 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
2SB642 |
Silicon PNP epitaxial planer type Silicon PNP epitaxial planner type
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
2SA1847 |
PNP epitaxial type silicon transistor PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC[NEC]
|
HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
RN2306 RN2302 RN2303 RN2304 RN2301 RN2305 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
RN4604 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
Toshiba Semiconductor
|
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
RN4911 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
RT1A3906-T122 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
|
Isahaya Electronics Cor... Isahaya Electronics Corporation
|
2SA1235 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
|
Isahaya Electronics Corporation
|
2SA1602 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE (SUPER MINI TYPE)
|
Isahaya Electronics Corporation
|