PART |
Description |
Maker |
CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM MoBL2 4-Mb (256K x 16) Static RAM MoBL® 4-Mbit (256K x 16) Static RAM 5V, 3.3V, ISR High-Performance CPLDs Licorice Board (CY22150 Candy Board) EEPROM MoBL® 4-Mbit (512K x 8) Static RAM EEPROM MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM MoBL® 2-Mbit (128K x 16) Static RAM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
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Bourns, Inc. 3M Company
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UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
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NEC TOKIN, Corp.
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IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44 Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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UPD424800G5-10-7JD UPD424800G5-10-7KD UPD424800V-8 |
256K (32K x 8) Static RAM 8K x 8 Static RAM RoboClock® High-speed Multi-phase PLL Clock Buffer x8 Fast Page Mode DRAM x8快速页面模式的DRAM
|
NEC TOKIN, Corp.
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IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc. IDT
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IS61C25616AL IS64C25616AL IS61C25616AL-10KI IS61C2 |
256K x 16 HIGH-SPEED CMOS STATIC RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44 256K x 16 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC Integrated Silicon Solu...
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CY62147EV30LL-45BVXA CY62147EV30LL-45BVXI CY62147E |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
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IS61LPS51218A IS61LPS51218A12 IS64LPS25636A IS61LP |
256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc
|
IS61LF51218A-7.5B3 IS61LF51218A-7.5B2 IS61LF51218A |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
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TC55VD836FF-150 TC55VD836FF-133 TC55VD836FF-143 |
256K Word x 36 Bit Synchronous No-turnround Static RAM(256K 字x36位同步无转向静RAM) 256K字36位同步无具体时间的静态RAM56K字x36位同步无转向静态内存)
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Toshiba Corporation Toshiba, Corp.
|
V62C21164096L-70BI V62C21164096L-70T V62C21164096L |
256K x 16, 0.20 um CMOS STATIC RAM 256K × 160.20微米的CMOS静态RAM
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Mosel Vitelic, Corp.
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IS61LV2568-8T IS61LV2568-8K IS61LV2568 IS61LV2568- |
x8 SRAM 256K x 8 HIGH-SPEED CMOS STATIC RAM 256K X 8 STANDARD SRAM, 15 ns, PDSO44 256K x 8 HIGH-SPEED CMOS STATIC RAM 256K X 8 STANDARD SRAM, 15 ns, PDSO36
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Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution, Inc.
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