| PART |
Description |
Maker |
| PEB2045 PEB2045K PEB2045-NVA3 PEB2045-PVA3 PEF2045 |
MTSC (Memory Time Switch CMOS)
From old datasheet system
Memory Time Switch CMOS (MTSC)
|
Infineon
|
| PEF2045 PEB2045-N PEB2045 PEF2045-N PEF2045-P PEB2 |
Memory Time Switch CMOS (MTSC)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| PEF2047-N-16V2.1 PEB2047-NV2.1 |
Memory Time Switch Large MTSL TELECOM, DIGITAL TIME SWITCH, PQCC44
|
SIEMENS AG
|
| PEB2047 Q67100-H62 PEB2047-NV2.1 PEF2047-N-16V2.1 |
Memory Time Switch Large MTSL
|
SIEMENS[Siemens Semiconductor Group]
|
| UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V
Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
POT THUMBWHEEL 10K OHM LINEAR
|
Panasonic Semiconductor
Panasonic Corporation
|
| SL74HC652 HC652 SL74HC652N SL74HC652D |
EPROM IC; Memory Size:128Kbit; Memory Configuration:16K x 8; Access Time, Tacc:250ns; Package/Case:28-DIP; EPROM Type:Parallel UV Erasable; Supply Voltage Nom, Vcc:5V; Mounting Type:Through Hole; Voltage Rating:5V
Octal 3-State Bus Transceivers and D Flip-Flops(High-Performance Silicon-Gate CMOS)
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IDT7200L IDT7201LA IDT7202LA |
CMOS ASYCHRONOUS FIFO 256 x 9 Memory(CMOS异步先进先出256x 9位存储器)
CMOS ASYCHRONOUS FIFO 512 x 9 Memory(CMOS异步先进先出512x 9位存储器)
CMOS ASYCHRONOUS FIFO 1024 x 9 Memory(CMOS异步先进先出1024x 9位存储器) 的CMOS异步先进先出存储024 × 9的CMOS（异步先进先024x 9位存储器
|
Intersil Corporation
Intersil, Corp.
|
| TMM24256BP-20 TMM24256BP-17 TMM24256BF-20 TMM24256 |
200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
|
TOSHIBA
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DS1992 DS1994 |
1Kbit Memory iButton(1K位存储器按钮)
4Kbit Plus Time Memory iButton(4K定时存储器电子按
|
Maxim Integrated Products, Inc.
|
