| PART |
Description |
Maker |
| IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 |
OptiMOS-P2 Power-Transistor
80 A, 30 V, 0.0069 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
80 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA GREEN, PLASTIC, TO-262, 3 PIN
80 A, 30 V, 0.0072 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
|
Infineon Technologies AG
|
| BSP220/T3 BSP92-T |
225 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SOT-223, 4 PIN
0.18 A, 200 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| 2SK3991-ZK 2SK3991 2SK3991-ZK-E1-AZ |
30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA LEAD FREE, TO-252, MP-3ZK, 3 PIN
SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
| IRHQ7110 IRHQ4110 IRHQ8110 IRHQ3110 IRHQ8110N IRHQ |
100V Quad N-Channel MOSFET in a 28-pin LCC package
100V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package
|
IRF[International Rectifier]
|
| NP40N10VDF-E1-AY NP40N10PDF-E1-AY NP40N10YDF-E1-AY |
40 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 LEAD FREE, MP-3ZP, 3 PIN
40 A, 100 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, TO-263, MP-25ZP, 3 PIN
MOS FIELD EFFECT TRANSISTOR
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| IRLIZ34G-005 IRFI9Z24G-005 IRFI9Z34G-004PBF IRFI9Z |
20 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
8.5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
12 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
4.1 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
5.9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
9.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
12 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
|
Bourns, Inc.
Cypress Semiconductor Corp.
Vishay Intertechnology, Inc.
|
| RJK1008DPN RJK1008DPN-00-02 |
80 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SC-46, 3 PIN
N-Channel Power MOSFET High-Speed Switching Use
|
Lattice Semiconductor, Corp.
Renesas Electronics Corporation
|
| RJK1536DPE-00-J3 RJK1536DPE-10 |
50 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
N-Channel Power MOSFET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| AM29C943DE AM29C941PC AM29C941DC |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package; Similar to IRHG6110 with optional Total Dose Rating of 300kRads
100V Quad N-Channel MOSFET in a 28-pin LCC package; Similar to IRHQ7110 with optional Total Dose Rating of 500kRads 10位D型锁存器
100V Quad P-Channel MOSFET in a 28-pin LCC package; A IRHQ9110 with Standard Packaging 10位D型锁存器
|
FCI
NXP Semiconductors N.V.
|
| 2SK3571 2SK3571-S 2SK3571-Z 2SK3571-ZK 2SK3571-ZK- |
SWITCHING N-CHANNEL POWER MOSFET
48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 MP-25ZK, 3 PIN
|
http://
NEC[NEC]
NEC Corp.
|
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