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International Rectifier, Corp.
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| Part No. |
JANSH2N7269U
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| OCR Text |
irhn8250 200v 0.100 w 26a features: n radiation hardened up to 1 x 10 6 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and ... |
| Description |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管（之HEXFET晶体管）
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| File Size |
276.10K /
12 Page |
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International Rectifier, Corp.
|
| Part No. |
JANSH2N7269U
|
| OCR Text |
... (si) 0.1 ? 26a jansg2n7269u irhn8250 1000k rads (si) 0.1 ? 26a jansh2n7269u for footnotes refer to the last page irhn7250 jansr2n7269u 200v, n-channel ref:mil-prf-19500/603 rad-hard ? hexfet ? technology smd-1 features: s... |
| Description |
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 200000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET 1封装
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| File Size |
278.93K /
12 Page |
View
it Online |
Download Datasheet |
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