NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 128 x 128 pixel format, LED or EL Backlight available
...20 12 3 100 150 150 -65 to +150 v v v mA mW C C
Caution; Electrostatic Sensitive Device.
Document No. P10399EJ2v0DS00 (2nd edition) (P...250 GHz pF dB dB UNIT TEST CONDITION vCB = 10 v, IE = 0 vEB = 1 v, IC = 0 vCE = 10 v, IC = 20 mA*1 v...
Description
NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...0 10 1.5 65 150 150 -65 to +150 v v v mA mW C C
Caution; Electrostatic Sensitive Device.
Document No. P10400EJ2v0DS00 (2nd edition) (P...250 GHz pF dB dB UNIT TEST CONDITION vCB = 10 v, IE = 0 vEB = 1 v, IC = 0 vCE = 8 v, IC = 20 mA*1 vC...
Description
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...0 10 1.5 35 150 150 -65 to +150 v v v mA mW C C
Caution; Electrostatic Sensitive Device.
Document No. P10401EJ2v0DS00 (2nd edition) (P...250 GHz pF dB dB UNIT TEST CONDITION vCB = 10 v, IE = 0 vEB = 1 v, IC = 0 vCE = 6 v, IC = 10 mA*1 vC...
Description
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...5 10 2 80 1 150 -55 ~ +150 Unit v v v mA W C C
1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package
marking
Symbol vCBO vCEO...250 GHz pF dB dB dB min typ max 1 1 Unit A A v v
2.50.1
+0.25
1
Transistor
PC -- Ta
1....
Description
Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
....5 1 1 150 -55 ~ +150 1cm2 Unit v v v A A W C C
1:Base 2:Collector 3:Emitter
3
2
1
Symbol vCBO vCEO vEBO ICP IC PC* Tj Tstg
...250
Transition frequency fT (MHz)
0.3 1 3 10
30 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta...