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MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
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| Part No. |
MRF3866R1R2 MSC1312 MRF3866 MRF3866R1
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| OCR Text |
...ol Test Conditions Min. Maximum unilateral Gain IC = 50 mAdc, VCE = 15 Vdc, f = 300 MHz Maximum Available Gain IC = 50 mAdc, VCE = 15 Vdc, f = 300 MHz Insertion Gain IC = 50 mAdc, VCE = 15 Vdc, f = 300 MHz Value Typ. 15 17 12.5 Max. Unit dB... |
| Description |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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| File Size |
169.84K /
5 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
2SC4805 0401
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| OCR Text |
...ce Foward transfer gain Maximum unilateral power gain Noise figure
(Ta=25C)
Symbol ICBO IEBO hFE fT Cob | S21e NF |2 GUM Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 200mA* VCE = 8V, IC = 15mA, f = 1.5GHz VCB = 10V, IE =... |
| Description |
Transistor
From old datasheet system
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| File Size |
45.32K /
3 Page |
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it Online |
Download Datasheet |
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panasonic
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| Part No. |
2SC4805
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| OCR Text |
...ce Foward transfer gain Maximum unilateral power gain Noise figure
(Ta=25C)
Symbol ICBO IEBO hFE fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 200mA* VCE = 8V, IC = 15mA, f = 1.5GHz VCB = 10V, IE =... |
| Description |
SMini3-G1
From old datasheet system
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| File Size |
56.11K /
3 Page |
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it Online |
Download Datasheet |
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panasonic
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| Part No. |
2SC5556
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| OCR Text |
...nsfer gain Noise figure Maximum unilateral power gain Collector output capacitance Gain bandwidth product Symbol VCBO VCEO ICBO IEBO hFE S21e2 NF GUM Cob fT Conditions IC = 10 A, IE = 0 IC = 100 A, IB = 0 VCB = 10 V, IE = 0 VEB = 2 V, IC = ... |
| Description |
Mini3-G1
From old datasheet system
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| File Size |
66.98K /
3 Page |
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it Online |
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Philips
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| Part No. |
BFG97 BFG97_CNV_2
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| OCR Text |
...in transition frequency maximum unilateral power gain up to Ts = 125 C (note 1) IC = 70 mA; VCE = 10 V; Tj = 25 C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; f = ... |
| Description |
NPN 5 GHz wideband transistor
From old datasheet system
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| File Size |
90.38K /
14 Page |
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it Online |
Download Datasheet |
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Matsshita / Panasonic
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| Part No. |
2SC3704 0611
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| OCR Text |
...apacitance Noise figure Maximum unilateral power gain Foward transfer gain
(Ta=25C)
Symbol ICBO IEBO hFE1 hFE2 fT Cob NF GUM | S21e |2 Conditions VCB = 15V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCE = 1V, IC = 3mA VCE = 8V, IC = 2... |
| Description |
Transistor
From old datasheet system
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| File Size |
46.25K /
3 Page |
View
it Online |
Download Datasheet |
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panasonic
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| Part No. |
2SC3704
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| OCR Text |
...apacitance Noise figure Maximum unilateral power gain Foward transfer gain
(Ta=25C)
Symbol ICBO IEBO hFE1 hFE2 fT Cob NF GUM | S21e |2 Conditions VCB = 15V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCE = 1V, IC = 3mA VCE = 8V, IC = 2... |
| Description |
Mini3-G1
From old datasheet system
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| File Size |
49.43K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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