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s-igbt Datasheet PDF File

For s-igbt Found Datasheets File :: 10475 Search Time::1.719ms
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				IRF[International Rectifier]
Part No.	GA600HD25S
OCR Text	....0V, I C = 5.0mA,TC= 25/125C -- S VCE = 25V, I C = 600A 2.0 mA VGE = 0V, VCE = 250V 20 VGE = 0V, VCE = 250V, TJ = 125C 1.8 V IF = 300A, VGE = 0V -- IF = 300A, VGE = 0V, TJ = 125C 1.0 A VGE = 14V (18V zeners gate-emitter) 80 C IC = 300A, t =...
Description	250V DC-1 kHz (Standard) Single IGBT in a Dual INT-A-Pak package Standard Speed IGBT
File Size	625.24K / 10 Page	View it Online	Download Datasheet

				Harris, Corp. Fairchild Semiconductor HARRIS[Harris Corporation]
Part No.	HGTG12N60C3D
OCR Text	SEMICONDUCTOR HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package JEDEC STYLE TO-247 E C G January 1997 Features * * * * * 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . ....
Description	36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的，的ufs系列N沟道IGBT的与反平Hyperfast二极 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	102.34K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR1210
OCR Text	...V or VS VO = 0V, VIN = 0 PW 10 s VO = 15V, VIN = VS PW 10 s V 2 www.irf.com ADVANCED INFORMATION IR1210 Dynamic Electrical Characteristics VBIAS (VS) = 15V, CL = 1000 pF, TA = 25C unless otherwise specified. Symbol td1...
Description	Dual Low Side Driver in a 8-lead SOIC package
File Size	62.48K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120
OCR Text	... is further enhanced by the IPM's integrated over temperature and under voltage lock out protection. Compact, automatically assembled Intell...IGBT and diode processes. In Table 6.1 the third generation family has been divided into two groups,...
Description	USING INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
File Size	922.36K / 31 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BSM75GD120DN2 075D12N2 C67070-A2516-A67
OCR Text	...e gfs 31 5.1 0.72 0.38 - S nF - VCE = 20 V, IC = 75 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Outp...IGBT K/W IC 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 160 ZthJC 10 -1 1...
Description	IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT From old datasheet system
File Size	185.11K / 9 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM100DY-28H
OCR Text	...peres/1400 Volts A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P - DIA. (2 TYP.) J N J N J .110 TAB ...IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super...
Description	Dual IGBTMOD 100 Amperes/1400 Volts
File Size	67.61K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
Part No.	CM150DY-28H
OCR Text	...peres/1400 Volts A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P - DIA. (2 TYP.) J N J N J .110 TAB ...IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super...
Description	Dual IGBTMOD 150 Amperes/1400 Volts
File Size	69.57K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM200DY-28H
OCR Text	...r Qrr IE = 200A, diE/dt = -400A/s IE = 200A, diE/dt = -400A/s VCC = 800V, IC = 200A, VGE1 = VGE2 = 15V, RG = 1.6 VGE = 0V, VCE = 10V Test Co...IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.085 0.18 0.045 Units C...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.59K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM300DY-28H
OCR Text	... L D C F C1 E1 R G S - M6 THD. (3 TYP) N K K G H TAB #110, t = 0.5 Q N K E J N Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-b...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.35K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM50DY-28H
OCR Text	... C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R TAB#110 t=0.5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridg...
Description	IGBT Modules:1400V MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	48.00K / 4 Page	View it Online	Download Datasheet

For s-igbt Found Datasheets File :: 10475 Search Time::1.719ms
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