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For probability Found Datasheets File :: 5625 Search Time::4.281ms
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				Freescale Semiconductor, Inc
Part No.	MRF6S21060NR1
OCR Text	... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- - 40 dBc in 3.84 MHz Bandwidth * Capable of Handling 5:1 VSWR, @...
Description
File Size	613.86K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF6G15LS-500H
OCR Text	...ar (of output signal) at 0.01 % probability on ccdf; pa r of input signal = 9.5 db at 0.01 % probability on ccdf. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excelle...
Description	Power LDMOS transistor
File Size	699.21K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF8G19LS-170BV
OCR Text	...64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. [2] test signal: 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r...
Description	Power LDMOS transistor
File Size	373.86K / 13 Page	View it Online	Download Datasheet

				MOTOROLA
Part No.	MRF6S21060N
OCR Text	... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- - 40 dBc in 3.84 MHz Bandwidth * Capable of Handling 5:1 VSWR, @...
Description	2110鈥?170 MHz, 14 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
File Size	613.88K / 16 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MRF5P21180R6 MRF5P21180
OCR Text	...rier Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF. Output Power -- 38 Watts Avg. Power Gain -- 14 dB Efficiency -- 25.5% IM3 -- 37.5 dBc ACPR -- -41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and ...
Description	N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor
File Size	406.67K / 9 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFG35002N6T1
OCR Text	... 3.84 MHz, PAR = 8.5 dB @ 0.01% probability on CCDF. Power Gain -- 10 dB Drain Efficiency -- 27% ACPR @ 5 MHz Offset -- - 41 dBc in 3.84 MHz Channel Bandwidth * 1.5 Watts P1dB @ 3550 MHz, CW * Excellent Phase Linearity and Group Delay Chara...
Description	GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
File Size	205.73K / 12 Page	View it Online	Download Datasheet

				Kemet Corporation
Part No.	PEH200VZ5100MU2 PEH200ZV4220MU2 PEH200ZV4220MB2 PEH200MJ5220MB2 PEH200ZA3100MB2 PEH200OK4100MB2 PEH200VJ4100MB2 PEH200UY5100MB2 PEH200SD4100MB2 PEH200KO6100MB2 PEH200YZ4820MB2 PEH200UJ4150MB2 PEH200XL4220MB2 PEH200SL4330MB2 PEH200KA4680MU2 PEH200HD5330MB2 PEH200KD5220MU2 PEH200HO6150MU2 PEH200KD5220MB2 PEH200HH5470MB2 PEH200KA4680MB2 PEH200YV4330MB2 PEH200OD3330MB2 PEH200ZO4100MU2 PEH200ZO418HMB2 PEH200ZO418HMU2 PEH200MA4470MB2 PEH200ST4680MU2 PEH200ST4680MB2 PEH200PJ5100MU2 PEH200KO6100MU2 PEH200KV6220MB2 PEH200KV6220MU2 PEH200VM4220MB2 PEH200OC3220MB2 PEH200OC3220MU2 PEH200SN4680MB2 PEH200SN4680MU2 PEH200SY5150MB2 PEH200SY5150MU2 PEH200PH4680MB2 PEH200PH4680MU2 PEH200SC3680MB2 PEH200MC4680MB2 PEH200MC4680MU2 PEH200KU6150MU2 PEH200ZB3150MB2 PEH200ZB3150MU2
OCR Text	... component can be defned as the probability that it will perform satisfactorily under a given set of conditions for a given length of time. in practice, it is impossible to predict with absolute certainty how any individual component w...
Description	High CV value High CV value
File Size	4,725.50K / 13 Page	View it Online	Download Datasheet

				MOTOROLA
Part No.	MRF6S19060N
OCR Text	....2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 26% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Bandwidth * Capable of Handling 5:1 VSWR, ...
Description	1930鈥?990 MHz, 12 W Avg., 28 V, 2 x N鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
File Size	605.95K / 16 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc MOTOROLA
Part No.	MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S19100HSR3
OCR Text	....2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF. Power Gain -- 16.1 dB Drain Efficiency -- 28% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Channel Bandwidth * Capable of H...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
File Size	420.58K / 12 Page	View it Online	Download Datasheet

For probability Found Datasheets File :: 5625 Search Time::4.281ms
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