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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905l IRF4905S IRF4B905l IRF4905STRl IRF4905STRl-111 IRF4905STRR
OCR Text l HEXFET(R) Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l low-profile through-hole (IRF4905l) l 175C Operating Tempe...q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Dio...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55...q gs q gd t d(on) tr t d(off) tf lD lS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305l IRF5305S
OCR Text l HEXFET(R) Power MOSFET Advanced Process Technology Surface Mount (IRF5305S) l low-profile through-hole (IRF5305l) l 175C Operating Tempe...q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Dio...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated ...q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ...VAlANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, &lt; 1%) ...q gs q gd Parameter Turn-on Time Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge T...
Description From old datasheet system
N - CHANNEl ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530l IRF530NS IRF530Nl
OCR Text l HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF530NS) low-profile through-hole (IRF530Nl) 175C Oper...q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6....
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ... D1 D l2(1) l1 q l b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...egible (turn-on is dominated by l S+lD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) N-...q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 71 Fig 6....
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...B C D E e e1 H K 0 .10 (.00 4) l 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 ...
Description Circular Connector; MIl SPEC:MIl-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...B C D E e e1 H K 0 .10 (.00 4) l 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 ...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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