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BT138 3216HS FDD7N20 CIDCC LTC491CN 080CT CIDCC E000480
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  j-b Datasheet PDF File

For j-b Found Datasheets File :: 142604    Search Time::2.203ms    
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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...g T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Cur...B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S . Part Marki...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...g T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms ...B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S . Part Marki...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) ...B R )D SS tp 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( o C) Fig 12c. ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ... factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) ...B R )D SS tp Starting T J , Junction Temperature (oC) Fig 12c. Maximum Avalanche Energy Vs. Dr...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text ... factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) ...B R )D SS tp 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( C) ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)

File Size 105.33K  /  8 Page

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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ... factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Dur...B R )D SS tp 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 153.38K  /  11 Page

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ... factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Durat...B R )D SS tp 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...rain-to-Source Current ( ) T J = 25C 2.5 TJ = 175C R DS(on) , Drain-to-Source On Resistance 2.0 100.00 (Normalized) 1.5 ...B R )D SS tp 130 0 25 50 75 100 125 150 175 Starting T , Junction Temperature J ( C) ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...rain-to-Source Current ( ) T J = 25C 2.5 TJ = 175C R DS(on) , Drain-to-Source On Resistance 2.0 100.00 (Normalized) 1.5 ...B R )D SS tp 130 0 25 50 75 100 125 150 175 Starting T , Junction Temperature J ( C) ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ... factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (...B R )D SS tp 1000 500 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C)...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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