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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
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| Part No. |
IRFZ32 IRFZ30
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| OCR Text |
...vds 50v 50v rds(on) 0.05n o.o?n id 30a 2ba features: ? extremely low rds(on) ? compact plastic package ? fast switching ? low drive current ...38a- vds see rg. 18 lor test circuit. (g independent of operating tern measured from the contact scr... |
| Description |
IM-Channel 5O VOLT POWER MOSFETs
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| File Size |
938.09K /
3 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT38F50J
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| OCR Text |
...bsolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or ... |
| Description |
N-Channel FREDFET
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| File Size |
263.05K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT38F80L APT38F80B2
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| OCR Text |
...bsolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or ... |
| Description |
N-Channel FREDFET
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| File Size |
252.27K /
4 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT38M50J
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| OCR Text |
...bsolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or ... |
| Description |
N-Channel MOSFET
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| File Size |
262.46K /
4 Page |
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it Online |
Download Datasheet |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFN38N100Q2
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| OCR Text |
...IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1
...38A I D = 19A
20
24
-50
-25
0
25
50
75
1 00
1 25
1 50
V DS - Vol... |
| Description |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
561.81K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020JFLL
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| OCR Text |
...
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...38A
EON includes diode reverse recovery.
SWITCHING ENERGY (J)
2000
SWITCHING ENERGY (J)
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| Description |
40 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
256.97K /
5 Page |
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it Online |
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Price and Availability
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