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  80v 5a Datasheet PDF File

For 80v 5a Found Datasheets File :: 2772    Search Time::5.796ms    
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    IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR120NTRR IRFU120NPBF

IRF[International Rectifier]
Part No. IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR120NTRR IRFU120NPBF
OCR Text ...DS = 100V, VGS = 0V A 250 VDS = 80v, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 V GS = -20V 25 ID = 5.7A 4.8 nC VDS = 80v 11 VGS = 10V, See F...5a, VGS = 0V --- 99 150 ns TJ = 25C, I F = 5.7A --- 390 580 nC di/dt = 100A/s Intrinsic turn-on ti...
Description    Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
(IRFR120N / IRFU120N) HEXFET Power MOSFET
HEXFET® Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

File Size 145.98K  /  10 Page

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    MIC59P50 MIC59P50BN MIC59P50BV MIC59P50BWM MIC59P5011

MICREL[Micrel Semiconductor]
Part No. MIC59P50 MIC59P50BN MIC59P50BV MIC59P50BWM MIC59P5011
OCR Text ...tched driver is a high-voltage (80v), high-current (500mA) integrated circuit comprised of eight CMOS data latches, a bipolar Darlington tra...5a, Note 1 Power Dissipation (PD) Plastic DIP (N) .....................................................
Description    8-Bit Parallel-Input Protected Latched Driver

File Size 94.38K  /  5 Page

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    MIC59P60 MIC59P60BN MIC59P60BV MIC59P60BWM

MICREL[Micrel Semiconductor]
Part No. MIC59P60 MIC59P60BN MIC59P60BV MIC59P60BWM
OCR Text ...tched driver is a high-voltage (80v), high-current (500mA) integrated circuit comprised of eight CMOS data latches, a bipolar Darlington tra...5a, Note 2 Power Dissipation (PD) Plastic DIP (N) .....................................................
Description 8-Bit Serial-Input Protected Latched Driver

File Size 100.74K  /  12 Page

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    PACDN010 PACDN010QR PACDN010QT PACDN010TR PACDN010TT

CALMIRCO[California Micro Devices Corp]
Part No. PACDN010 PACDN010QR PACDN010QT PACDN010TR PACDN010TT
OCR Text ...-883, Me thod 3015 2K V 0.65V 0.80v 125MHz 0.1A 5pF Max 0.85V 1.0V 5a Max. Bus Speed (See Note 1) Channel leakage Input Capacitance ESD Protection Pins 24 24 Package QS OP T S S OP STANDARD PART ORDE RING INFORMATION Ord...
Description P/ACTIVE SCHOTTKY DIODE MEMORY BUS TERMINATOR

File Size 99.56K  /  4 Page

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    FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 FSL110R FSL110R3

INTERSIL[Intersil Corporation]
Part No. FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 FSL110R FSL110R3
OCR Text ...CISS COSS CRSS RJC RJA VDS = 80v, VGS = 0V VGS = 20V VGS = 12V, ID = 3.5a ID = 2.5a, VGS = 12V VDD = 50V, ID = 3.5a, RL = 14.3, VGS 12V, RGS = 7.5 Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On R...
Description From old datasheet system
3.5a/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
3.5a, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

File Size 58.10K  /  8 Page

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    FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3 FSL130R4 FN4031

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3 FSL130R4 FN4031
OCR Text ... Drain Current IDSS VDS = 80v, VGS = 0V VGS = 20V Gate to Source Leakage Current IGSS Drain to Source On-State Voltage Drain ...5a, VGS = 12V Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate C...
Description From old datasheet system
8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条,100V的,0.230欧姆,拉德硬,SEGR耐,N沟道功率MOSFET

File Size 45.31K  /  8 Page

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    FSL9110R1 FSL9110R FSL9110D FN4225 FSL9110R4 FSL9110D1 FSL9110D3 FSL9110R3

INTERSIL[Intersil Corporation]
Part No. FSL9110R1 FSL9110R FSL9110D FN4225 FSL9110R4 FSL9110D1 FSL9110D3 FSL9110R3
OCR Text ...ISS COSS CRSS RJC RJA VDS = -80v, VGS = 0V VGS = 20V Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance VGS = -12V, ID = 2.5a ID = 1.5a, VGS = -12V Turn-On Delay Time Rise Time Turn-...
Description 2.5 A, 100 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205aF
From old datasheet system
2.5a, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
2.5a/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

File Size 57.46K  /  8 Page

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    HI10387

HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HI10387
OCR Text ...ns IC=200mA VCB=160V VEB=5V VCE=80v VCE=80v, VBE(Off)=1.5V IC=5a, IB=10mA IC=10A, IB=100mA IC=5a, IB=2.5mA IC=5a, IB=5mA VCE=3V, IC=5a VCE=3V, IC=10A IC=5a IC=5a, VCE=3V VCE=3V, IC=10A Classification Of VCE(sat)1 Rank VCE(sat)1 KA <1.5,...
Description INDUCTOR,10UH,10%
NPN EPITAXIAL PLANAR TRANSISTOR

File Size 28.86K  /  3 Page

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    HJ10387

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
HSMC CORP.
Part No. HJ10387
OCR Text ...ns IC=200mA VCB=160V VEB=5V VCE=80v VCE=80v, VBE(off)=1.5V IC=5a, IB=10mA IC=10A, IB=100mA IC=5a, IB=2.5mA IC=5a, IB=5mA VCE=3V, IC=5a VCE=3V, IC=10A IC=5a VCE=3V, IC=5a VCE=3V, IC=10A *Pulse Test : Pulse Width 380us, Duty Cycle2% Class...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 33.48K  /  3 Page

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    IRF7452 IRF7452TR

IRF[International Rectifier]
Part No. IRF7452 IRF7452TR
OCR Text ...DS = 100V, VGS = 0V A 250 VDS = 80v, VGS = 0V, TJ = 150C 100 VGS = 24V nA -100 VGS = -24V Dynamic @ TJ = 25C (unless otherwise specified)...5a I D , Drain-to-Source Current (A) 2.0 10 TJ = 150 C 1.5 TJ = 25 C 1 1.0 ...
Description 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5a)

File Size 103.14K  /  8 Page

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