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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQA7N80C
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OCR Text |
...
12
VDS = 160V
10
VDS = 400V VDS = 640V
1500
Ciss
VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
1000
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
4
500
Crss
0 -1 10
2
Note : ID = 6.6A
0 10
... |
Description |
800V N-Channel MOSFET 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET 800V N-Channel Advance Q-FET C-Series
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File Size |
608.30K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQA8N80
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OCR Text |
...
12
VDS = 160V
10
VDS = 400V VDS = 640V
2500
VGS, Gate-Source Voltage [V]
Ciss
8
Capacitance [pF]
2000
Coss
1500
6
4
1000
Crss
500
Notes : 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 8.4 A
... |
Description |
800V N-Channel MOSFET
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File Size |
692.48K /
8 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E3045A
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OCR Text |
...Ciss
800V
600V
0.6A
400V
0.4A
10pF
Coss
0.2A 200V 0.0A 0V 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Crss 0V 10V 20V 30V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 19. Typical capacitance as a function of collector-emitter voltage... |
Description |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ... IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220 HighSpeed 2-Technology From old datasheet system
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File Size |
387.25K /
13 Page |
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IRF[International Rectifier]
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Part No. |
IRF840AS_04 IRF840AL IRF840ALPBF IRF840AS IRF840ASPBF IRF840AS04
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OCR Text |
...DS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- ... |
Description |
SMPS MOSFET HEXFET? Power MOSFET SMPS MOSFET HEXFET㈢ Power MOSFET
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File Size |
662.55K /
10 Page |
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IRF[International Rectifier]
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Part No. |
IRGB4059DPBF
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OCR Text |
...1Mhz ns J ns J nC IC = 4A VCC = 400V VGE = 15V
Conditions
Ref.Fig 24 CT1
IC = 4A, VCC = 400V, VGE = 15V RG = 100, L=1mH, LS= 150nH,...0 0 20 40 60 80 100 120 140 160 180 TC (C)
30 20 10 0 0 20 40 60 80 100 120 140 160 180 TC (C)
... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
283.45K /
10 Page |
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http:// IRF[International Rectifier]
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Part No. |
IRGB440U
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OCR Text |
...ditions 83 IC = 22A 17 nC VCC = 400V See Fig. 8 29 VGE = 15V -- TJ = 25C -- ns IC = 22A, V CC = 400V 150 VGE = 15V, R G = 10 100 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 0.70 -- TJ = 150C, -- ns IC = 22A, V CC = 400V -- ... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)
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File Size |
215.42K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRGP440UD2
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OCR Text |
...ditions 83 IC = 22A 17 nC VCC = 400V 29 See Fig. 8 -- TJ = 25C -- ns IC = 22A, V CC = 400V 240 VGE = 15V, R G = 10 220 Energy losses include...0 A TJ = 25C See Fig. 10 TJ = 125C 15 V R = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt = 2... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A)
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File Size |
389.26K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRGP440U
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OCR Text |
...ditions 83 IC = 22A 17 nC VCC = 400V See Fig. 8 29 VGE = 15V -- TJ = 25C -- ns IC = 22A, V CC = 400V 150 VGE = 15V, R G = 10 100 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 0.70 -- TJ = 150C, -- ns IC = 22A, V CC = 400V -- ... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)
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File Size |
218.98K /
6 Page |
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