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SamHop Microelectronics...
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Part No. |
STT468A
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OCR Text |
...t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching characteristics v dd =20v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =1.1a v ds =10v , i d =1.... |
Description |
Super high dense cell design for low RDS(ON). N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
124.86K /
8 Page |
View
it Online |
Download Datasheet |
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Kersemi Electronic Co., Ltd. Kersemi Electronic Co., Ltd... Kersemi Electronic Co.,...
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Part No. |
IRFU6215PBF IRFR6215PBF
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OCR Text |
... leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? ??? 66 i d = -6.6a q gs gate-to-source charge ??? ??? 8.1 nc v ds = -120v q gd gate-to-drain ("miller") charge ??? ??? ... |
Description |
HEXFET? Power MOSFET
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File Size |
3,836.22K /
10 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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