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DYNEX[Dynex Semiconductor]
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| Part No. |
DCR1003SF
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| OCR Text |
...5V Tj = 25oC, Rg-k =
110
200
s
IL IH
Latching current Holding current
-
350 230
mA mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD IGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage... |
| Description |
Phase Control Thyristor
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| File Size |
114.83K /
8 Page |
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DCR5980Z18 DCR5980Z DCR5980Z12 DCR5980Z14 DCR5980Z16
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| OCR Text |
...5V Tj = 25C, VG-K = 150 40 750 200 mA mA 1.0 0.77 0.05 1.5 V m s Repetitive 50Hz Non-repetitive Min. Max. 500 1000 250 500 Units mA V/s A/s A/s
3/9
www.dynexsemi.com
DCR5980Z
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Para... |
| Description |
Shielded Paired Cable; Number of Conductors:2; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape; Shielding Coverage:100% RoHS Compliant: Yes
Phase Control Thyristor Target Information
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| File Size |
126.48K /
9 Page |
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DYNEX[Dynex Semiconductor]
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| Part No. |
DCR720E18 DCR720E DCR720E12 DCR720E14 DCR720E16
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| OCR Text |
...
600
1000
400
500
200
dc 1/2 wave 3 phase 6 phase 200 400 600 800 Mean on-state current, IT(AV) - (A) 1000
0 0.5
1.0 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V)
3.0
0 0
Fig.2 Maximum (limit) on-state... |
| Description |
Phase Control Thyristor Preliminary Information
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| File Size |
133.88K /
9 Page |
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DFM1200FXM18-A000
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| OCR Text |
...
4000
3000
2000
2000 200 0 0 0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig. 5 Power dissipation
Fig. 6 DC current rating ... |
| Description |
Fast Recovery Diode Module Preliminary Information
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| File Size |
99.61K /
7 Page |
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DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
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| Part No. |
DIM1200ESM33-A000 ESM33-A000
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| OCR Text |
...C
1400 1200 1000 800 600 400 200 0 0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V 1 2 3 4 Collector-emitter voltage, Vce - (V) 5 6
Collecto...1800V 2000 Cge = 120nF 4000
Fig. 4 Typical output characteristics
Conditions: Tcase = 125C IC ... |
| Description |
Single Switch IGBT Module Preliminary Information
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| File Size |
194.37K /
10 Page |
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DIM800NSM33-A000
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| OCR Text |
... 150nF L ~ 100nH Min. Typ. 1600 200 850 500 300 1000 24 450 650 500 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated othe...1800V RG(ON) = RG(OFF) = 2.2 Cge = 150nF L ~ 100nH IF = 800A, VCE = 1800V, dIF/dt = 3000A/s Min. Typ... |
| Description |
Single Switch IGBT Module Preliminary Information
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| File Size |
173.83K /
10 Page |
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it Online |
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Price and Availability
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