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IRF[International Rectifier]
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| Part No. |
IRF7807VPBF IRF7807VTRPBF IRF7807VPBF-15
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| OCR Text |
...
Min Typ Max Units
30 --- 1.0 --- --- --- --- --- --- --- --- --- --- 0.9 --- --- --- --- --- 17 --- --- --- --- 9.5 2.3 1.0 2.4 3.4 12 ...700A/s VDS = 16V, VGS = 0V, IS = 7.0A di/dt = 700A/s , (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A... |
| Description |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
N Channel Application Specific MOSFET
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| File Size |
189.21K /
8 Page |
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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DCR504ST14 DCR504ST DCR504ST10 DCR504ST11 DCR504ST12 DCR504ST13
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| OCR Text |
0 DS4448 -5.0 July 2001
FEATURES
s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free
KEY PARAMETERS VDRM IT(AV) ITSM dVdt dI/dt 1400V 456A 6800A 1000V/s 700A/s
APPLICATIONS
s High Power Drives s High ... |
| Description |
Phase Control Thyristor 717 A, 1000 V, SCR
Phase Control Thyristor 717 A, 1100 V, SCR
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| File Size |
106.85K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF7807 IRF7807A IRF7807ATR IRF7807TR
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| OCR Text |
...V(BR)DSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS Qg Q gs1 Q gs2 Qgd QSW Q oss Rg td(on) tr td (off) tf 12 2.1 0.76 2.9 3.66 14 1.2 12 17 25 6 5...700A/s VDS = 16V, VGS = 0V, IS = 7A di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7A VDS =... |
| Description |
8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
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| File Size |
238.61K /
8 Page |
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it Online |
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APT
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| Part No. |
APT60S20B APT60S20S
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| OCR Text |
...ent (t c = 123c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) ...700a/ s v r = 133v, t c = 125 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1... |
| Description |
HIGH VOLTAGE SCHOTTKY DIODE
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| File Size |
191.40K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF7822 IRF7822TR
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| OCR Text |
...D IRF7822 30 12 18 13 150 3.1 3.0 -55 to 150 3.8 150 C A W A Units V
www.irf.com
1
07/11/01
IRF7822
Electrical Characteristics
P...700A/s VDS = 16V, VGS = 0V, IS = 15A 108 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = ... |
| Description |
18 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
HEXFET? Power MOSFET for DC-DC Converters
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| File Size |
70.08K /
6 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30S20BCTG_05 APT30S20BCTG APT30S20BCTG05
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| OCR Text |
...urrent (TC = 125C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Oper...700A/s VR = 133V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 133V, TC = 125C Test Conditions IF = 30A... |
| Description |
HIGH VOLTAGE SCHOTTKY DIODE
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| File Size |
108.88K /
4 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT2X61S20J
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| OCR Text |
...Current (TC =106C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Oper...700A/s VR = 133V, TC = 125C IF = 60A, diF/dt = -200A/s VR = 133V, TC = 125C Test Conditions IF = 60A... |
| Description |
HIGH VOLTAGE SCHOTTKY DIODES
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| File Size |
211.94K /
4 Page |
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Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT2X101S20J
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| OCR Text |
...urrent (TC = 105C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Oper...700A/s VR = 133V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 133V, TC = 125C Test Conditions IF = 10... |
| Description |
HIGH VOLTAGE SCHOTTKY DIODE
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| File Size |
214.85K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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