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  0.700 Datasheet PDF File

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    HMBT8050

HSMC[Hi-Sincerity Mocroelectronics]
Part No. HMBT8050
OCR Text ... pF Test Conditions IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=20V. IE=0 IC=500mA, IB=50mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Classification Of hFE...
Description NPN EPITAXIAL TRANSISTOR

File Size 29.39K  /  3 Page

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    HPN2907A PN2907A

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HPN2907A PN2907A
OCR Text ... -5 75 100 100 100 50 200 Typ. -0.2 -0.5 180 Max. -10 -50 -0.4 -1.6 -1.3 -2.6 300 8 Unit V V V nA nA V V V V Test Conditions IC=-10uA, IE=0 ...700 600 Power Dissipation-PD (mW) 500 400 300 200 100 0 0 50 100 o 150 200 Ambient T...
Description PNP EPITAXIAL PLANAR TRANSISTOR

File Size 36.46K  /  4 Page

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    HTIP42C HTIP42

HSMC CORP.
HI-SINCERITY MICROELECTRONICS, CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HTIP42C HTIP42
OCR Text ...V V Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V VCE=-60V VEB=-5V IC=-6A, IB=-600mA IC=-6A, VCE=-4V IC=-0.3A, VCE=-4V IC=-3A, VCE=-4V IC=-0.1A, VCE=-5V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz HTIP42C HSM...
Description PNP EPITAXIAL PLANAR TRANSISTOR 进步党外延平面晶体管

File Size 27.00K  /  3 Page

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    ICL3237E ICL3237ECA ICL3237ECAZ ICL3237EIA ICL3237EIAZ

INTERSIL[Intersil Corporation]
Part No. ICL3237E ICL3237ECA ICL3237ECAZ ICL3237EIA ICL3237EIAZ
OCR Text ...L3237EIA ICL3237EIAZ (See Note) 0 to 70 0 to 70 -40 to 85 -40 to 85 PACKAGE 28 Ld SSOP 28 Ld SSOP (Pb-free) 28 Ld SSOP 28 Ld SSOP (Pb-free) ...700 1700 1100 0.15 0.15 200 200 100 25 50 17 40 12 - kbps kbps kbps s s ns ns ns ns Receive...
Description -15kV ESD Protected, 10nA Supply- Current, 3V to 5.5V, 250k/1Mbps, RS-232 Transmitters/Receivers

File Size 229.71K  /  12 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...ount) Typ. --- --- Max. 0.74 40 Units C/W www.irf.com 1 07/16/02 IRF1302S/IRF1302L Electrical Characteristics @ TJ = ...700 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 104A, VGS = 0V --- 66 100 ns TJ = 25C, IF = ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...mbient (PCB mount) Typ. --- 0.50 --- Max. 0.65 --- 62 Units C/W www.irf.com 1 10/31/02 IRF1302 Electrical Characteris...700 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 104A, VGS = 0V --- 66 100 ns TJ = 25C, IF = 1...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...700 110 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Cr...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ...1220 See Fig.12a, 12b, 15, 16 2.0 -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter R...700 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 104A, VGS = 0VT --- 80 120 ns TJ = 25C, IF = ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 221.43K  /  11 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ... Max. 30 12 62 52 248 87 61 0.58 -55 to + 175 Units V V A W W W/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Ca...700 2 0 1 C rss 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG , ...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

File Size 137.00K  /  10 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...l D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...700 VDS L E A S , S ingle P ulse A valanche E nergy (m J) TO P 600 B O TTO M 500 ID -6...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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